A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO₂(Y)/Ta₂O₅/TiN/Ti Memristive Devices

Variability is an inherent property of memristive devices based on the switching resistance in a simple metal–oxide–metal structure compatible with standard complementary metal–oxide–semiconductor fabrication process. For each specific structure, variability should be measured and assessed as both negative positive factors for different applications devices. In this report, it shown how can extracted analyzed such main parameters resistive set reset voltages/currents depends methodology used experimental conditions. The obtained results taken into account design predictive simulation circuits.